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DISCRETE SEMICONDUCTORS
DATA SHEET
LTE21025R NPN microwave power transistor
Product specification Supersedes data of June 1992 1997 Feb 21
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES * Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR * Self-aligned process entirely ion implanted * Gold metallization realizes very stable characteristics and excellent lifetime * Input matching cell improves input impedance and allows an easier design of wideband circuits.
olumns
LTE21025R
PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
1 c
APPLICATIONS * Common emitter class-A linear power amplifiers up to 4.2 GHz.
3 b
DESCRIPTION
2
MAM131
e
NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.
Top view
Marking code: 439
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance up to Tmb = 25 C in a common emitter class-A test circuit. MODE OF OPERATION Class-A (CW) f (GHz) 2.1 VCE (V) 16 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. IC (mA) 400 PL1 (W) typ. 2.8 Gpo (dB) typ. 7.8
1997 Feb 21
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature soldering temperature at 0.3 mm from ceramic; t 10 s Tmb 75 C CONDITIONS open emitter RBE = 70 open base open collector - - - - - - -65 - - MIN.
LTE21025R
MAX. 40 20 16 3 800 8 +200 200 235 V V V V
UNIT
mA W C C C
handbook, halfpage
1
MGL006
handbook,
10
MGD973
Ptot (W) IC (A) 8
(1)
(2)
6
10-1 4
2
10-2
1
10 16
VCE (V)
102
0 0 50 100 150 200 Tmb (C)
Tmb 75 C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE 70 .
Fig.3 Fig.2 DC SOAR.
Power dissipation derating as a function of mounting-base temperature.
1997 Feb 21
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. See "Mounting recommendations in the General part of handbook SC19a". CHARACTERISTICS Tmb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE Ccb Cce Ceb PARAMETER collector cut-off current emitter cut-off current DC current gain collector-base capacitance collector-emitter capacitance emitter-base capacitance CONDITIONS VCB = 20 V; IE = 0 VCB = 40 V; IE = 0 VEB = 1.5 V; IC = 0 VCE = 5 V; IC = 400 mA VCB = 16 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz VCE = 16 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz VCB = 10 V; VEB = 1 V; IC = IE = 0; f = 1 MHz - - - 15 - - - MIN. - - - - 3 1.5 28 TYP. PARAMETER thermal resistance from junction to mounting-base thermal resistance from mounting-base to heatsink CONDITIONS Tj = 75 C Tj = 75 C; note 1
LTE21025R
MAX. 10 0.7
UNIT K/W K/W
MAX. 225 1.5 0.6 150 - - -
UNIT A mA A pF pF pF
1997 Feb 21
4
Philips Semiconductors
Product specification
NPN microwave power transistor
Table 1
LTE21025R
Scattering parameters: VCE = 16 V; IC = 400 mA (VCE and IC regulated); Tmb = 25 C; Zo = 50 ; typical values. (The figures given between brackets are values in dB). s11 MAGNITUDE (ratio) 0.94 0.94 0.94 0.93 0.93 0.93 0.92 0.93 0.93 0.93 0.93 0.93 0.93 0.92 0.88 0.89 0.90 0.90 0.87 0.83 0.82 0.83 0.80 0.73 0.69 0.67 0.69 0.72 0.76 ANGLE (deg) 176 174 173 172 170 168 167 166 164 167 163 162 161 159 151 148 147 147 142 134 129 130 130 127 122 122 126 130 128 s21 MAGNITUDE (ratio) 0.017 (-35.4) 0.018 (-34.7) 0.019 (-34.4) 0.020 (-34.1) 0.021 (-33.8) 0.022 (-33.3) 0.023 (-32.6) 0.026 (-31.6) 0.029 (-30.6) 0.032 (-29.9) 0.037 (-28.7) 0.040 (-27.9) 0.042 (-27.5) 0.043 (-27.3) 0.046 (-26.7) 0.052 (-25.7) 0.059 (-24.6) 0.069 (-23.2) 0.073 (-22.8) 0.075 (-22.5) 0.077(-22.2) 0.085 (-21.4) 0.091 (-20.8) 0.091 (-20.8) 0.087 (-21.2) 0.078 (-22.2) 0.071 (-23.0) 0.059 (-24.6) 0.054 (-25.4) ANGLE (deg) 43 46 47 49 49 50 50 50 49 54 54 53 51 49 46 43 41 38 32 26 21 18 11 3 -7 -15 -19 -18 -11 s12 MAGNITUDE (ratio) 2.79 (8.9) 2.39 (7.6) 2.07 (6.3) 1.85 (5.3) 1.66 (4.4) 1.50 (3.5) 1.39 (2.9) 1.31 (2.4) 1.23 (1.8) 1.16 (1.3) 1.11 (0.9) 1.07 (0.6) 1.03 (0.3) 0.99 (-0.1) 0.99 (-0.1) 0.92 (-0.7) 0.88 (-1.1) 0.90 (-0.9 0.88 (-1.1) 0.90 (-0.9) 0.87 (-1.2) 0.90 (-1.0) 0.91 (-0.8) 0.94 (-0.5) 0.95 (-0.5) 0.89 (-1.0) 0.83 (-1.7) 0.70 (-3.1) 0.60 (-4.4) ANGLE (deg) 81 77 72 68 64 60 57 53 49 48 43 39 35 30 22 14 9 1 -8 -18 -27 -37 -50 -64 -82 -100 -121 -141 -160 s22 MAGNITUDE (ratio) 0.49 0.54 0.52 0.52 0.53 0.53 0.53 0.54 0.54 0.55 0.54 0.55 0.55 0.56 0.56 0.57 0.58 0.59 0.60 0.61 0.63 0.65 0.69 0.74 0.79 0.84 0.89 0.92 0.94 ANGLE (deg) -173 -173 -176 -177 -179 179 179 177 176 179 176 175 176 174 170 168 168 168 169 168 166 165 165 164 162 157 150 143 136
f (MHz) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 4400 4600 4800
1997 Feb 21
5
Philips Semiconductors
Product specification
NPN microwave power transistor
PACKAGE OUTLINE
LTE21025R
handbook, full pagewidth
0.1 3.45 2.90 3 20.5 max seating plane 1.0 1 O 0.25 M 4.5 min 0.25 M 4.5 max
1.7 max
3.2 2.9
5.1
5.5 max
3.4 2 2.0 7.1 14.2
(1)
4.5 min
MBC888
Dimensions in mm. Torque on screw: max. 0.4 Nm Recommended screw: M2.5 (1) Flatness of this area ensures full thermal contact with bolt head.
Fig.4 SOT440A.
1997 Feb 21
6
Philips Semiconductors
Product specification
NPN microwave power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
LTE21025R
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Feb 21
7
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127147/00/02/pp8
Date of release: 1997 Feb 21
Document order number:
9397 750 01814

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